Lista de obras - Ilia Valov - Dominio Público Uruguay

A chemically driven insulator–metal transition in non-stoichiometric and amorphous gallium oxide

scientific article published on 06 April 2008

Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/nanoelectronic logic and memory architectures

artículo científico publicado en 2013

An EMF cell with a nitrogen solid electrolyte—on the transference of nitrogen ions in yttria-stabilized zirconia

artículo científico publicado en 2010

An associative capacitive network based on nanoscale complementary resistive switches for memory-intensive computing

artículo científico publicado en 2013

Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces.

artículo científico publicado en 2012

Capacity based nondestructive readout for complementary resistive switches

artículo científico publicado en 2011

ChemInform Abstract: Defect Chemistry of the Cage Compound, Ca12Al14O33-δ- Understanding the Route from a Solid Electrolyte to a Semiconductor and Electride

Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories

artículo científico publicado en 2013

Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

Comment on real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte- based ReRAM.

artículo científico publicado en 2012

Defect chemistry of the cage compound, Ca12Al14O33−δ—understanding the route from a solid electrolyte to a semiconductor and electride

scientific article published on 03 March 2009

Degradation Kinetics during Oxygen Electrocatalysis on Perovskite-Based Surfaces in Alkaline Media

artículo científico publicado en 2018

Design of defect-chemical properties and device performance in memristive systems

artículo científico publicado en 2020

Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory.

artículo científico publicado en 2017

Direct observation of charge transfer in solid electrolyte for electrochemical metallization memory.

artículo científico publicado en 2012

Electrochemical Incorporation of Nitrogen into a Zirconia Solid Electrolyte

Electrochemical Tantalum Oxide for Resistive Switching Memories

artículo científico publicado en 2017

Electrochemical activation of molecular nitrogen at the Ir/YSZ interface

artículo científico publicado en 2011

Electrochemical dynamics of nanoscale metallic inclusions in dielectrics.

artículo científico publicado en 2014

Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: general discussion

scientific article published on 01 February 2019

Electrochemical metallization memories--fundamentals, applications, prospects

artículo científico publicado en 2011

Electrochemically prepared oxides for resistive switching memories

scientific article published on 01 February 2019

Electrochemistry at the Nanoscale.

artículo científico publicado en 2016

Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices

scientific article published on 10 September 2015

Interfacial Metal-Oxide Interactions in Resistive Switching Memories

artículo científico publicado en 2017

Ionic and electronic conductivity of nitrogen-doped YSZ single crystals

Ionic conductivity of low yttria-doped cubic zirconium oxide nitride single crystals

scholarly article by S. Berendts et al published November 2016 in Solid State Ionics

Memristors with alloyed electrodes

artículo científico publicado en 2020

Multibit memory operation of metal-oxide bi-layer memristors

artículo científico publicado en 2017

Nanoarchitectonics for Controlling the Number of Dopant Atoms in Solid Electrolyte Nanodots.

artículo científico publicado en 2018

Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide

scientific article published on 13 April 2012

Nanoscale cation motion in TaO(x), HfO(x) and TiO(x) memristive systems

artículo científico publicado en 2015

Nanoscale electrochemistry using dielectric thin films as solid electrolytes

scientific article published on 06 May 2016

Non-volatile memories: Organic memristors come of age.

artículo científico publicado en 2017

Oxide nitrides: From oxides to solids with mobile nitrogen ions

Oxygen Exchange Processes between Oxide Memristive Devices and Water Molecules

scientific article published on 07 June 2018

Phase-change memories (PCM) - Experiments and modelling: general discussion

artículo científico publicado en 2019

Physical origins and suppression of Ag dissolution in GeS(x)-based ECM cells.

artículo científico publicado en 2014

Preface

Preparation of nitrogen-doped YSZ thin films by pulsed laser deposition and their characterization

Quantum conductance and switching kinetics of AgI-based microcrossbar cells ⬇️

artículo científico publicado el 13 de abril de 2012

Resistive Switching Mechanisms on TaOx and SrRuO3 Thin-Film Surfaces Probed by Scanning Tunneling Microscopy

artículo científico publicado en 2016

Resistivity control by the electrochemical removal of dopant atoms from a nanodot

article

SET kinetics of electrochemical metallization cells: influence of counter-electrodes in SiO2/Ag based systems.

artículo científico publicado en 2017

Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities

artículo científico publicado en 2018

Silicon Oxide (SiO ): A Promising Material for Resistance Switching?

scientific article published on 29 June 2018

Spring-Like Pseudoelectroelasticity of Monocrystalline Cu2S Nanowire

artículo científico publicado en 2018

Switching kinetics of electrochemical metallization memory cells

artículo científico publicado en 2013

Synaptic and neuromorphic functions: general discussion

artículo científico publicado en 2019

Thermodynamics, structure and kinetics in the system Ga–O–N

Understanding the conductive channel evolution in Na:WO(3-x)-based planar devices

artículo científico publicado en 2015

Valence change ReRAMs (VCM) - Experiments and modelling: general discussion

scientific article published on 01 February 2019

Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches.

artículo científico publicado en 2014

Water-Mediated Ionic Migration in Memristive Nanowires with a Tunable Resistive Switching Mechanism

scientific article published on 14 October 2020

Lista de obras de Ilia Valov

A chemically driven insulator–metal transition in non-stoichiometric and amorphous gallium oxide

Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/nanoelectronic logic and memory architectures

An EMF cell with a nitrogen solid electrolyte—on the transference of nitrogen ions in yttria-stabilized zirconia

An associative capacitive network based on nanoscale complementary resistive switches for memory-intensive computing

Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces.

Capacity based nondestructive readout for complementary resistive switches

ChemInform Abstract: Defect Chemistry of the Cage Compound, Ca12Al14O33-δ- Understanding the Route from a Solid Electrolyte to a Semiconductor and Electride

Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories

Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

Comment on real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte- based ReRAM.

Defect chemistry of the cage compound, Ca12Al14O33−δ—understanding the route from a solid electrolyte to a semiconductor and electride

Degradation Kinetics during Oxygen Electrocatalysis on Perovskite-Based Surfaces in Alkaline Media

Design of defect-chemical properties and device performance in memristive systems

Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory.

Direct observation of charge transfer in solid electrolyte for electrochemical metallization memory.

Electrochemical Incorporation of Nitrogen into a Zirconia Solid Electrolyte

Electrochemical Tantalum Oxide for Resistive Switching Memories

Electrochemical activation of molecular nitrogen at the Ir/YSZ interface

Electrochemical dynamics of nanoscale metallic inclusions in dielectrics.

Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: general discussion

Electrochemical metallization memories--fundamentals, applications, prospects

Electrochemically prepared oxides for resistive switching memories

Electrochemistry at the Nanoscale.

Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices

Interfacial Metal-Oxide Interactions in Resistive Switching Memories

Ionic and electronic conductivity of nitrogen-doped YSZ single crystals

Ionic conductivity of low yttria-doped cubic zirconium oxide nitride single crystals

Memristors with alloyed electrodes

Multibit memory operation of metal-oxide bi-layer memristors

Nanoarchitectonics for Controlling the Number of Dopant Atoms in Solid Electrolyte Nanodots.

Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide

Nanoscale cation motion in TaO(x), HfO(x) and TiO(x) memristive systems

Nanoscale electrochemistry using dielectric thin films as solid electrolytes

Non-volatile memories: Organic memristors come of age.

Oxide nitrides: From oxides to solids with mobile nitrogen ions

Oxygen Exchange Processes between Oxide Memristive Devices and Water Molecules

Phase-change memories (PCM) - Experiments and modelling: general discussion

Physical origins and suppression of Ag dissolution in GeS(x)-based ECM cells.

Preface

Preparation of nitrogen-doped YSZ thin films by pulsed laser deposition and their characterization

Quantum conductance and switching kinetics of AgI-based microcrossbar cells ⬇️

Resistive Switching Mechanisms on TaOx and SrRuO3 Thin-Film Surfaces Probed by Scanning Tunneling Microscopy

Resistivity control by the electrochemical removal of dopant atoms from a nanodot

SET kinetics of electrochemical metallization cells: influence of counter-electrodes in SiO2/Ag based systems.

Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities

Silicon Oxide (SiO ): A Promising Material for Resistance Switching?

Spring-Like Pseudoelectroelasticity of Monocrystalline Cu2S Nanowire

Switching kinetics of electrochemical metallization memory cells

Synaptic and neuromorphic functions: general discussion

Thermodynamics, structure and kinetics in the system Ga–O–N

Understanding the conductive channel evolution in Na:WO(3-x)-based planar devices

Valence change ReRAMs (VCM) - Experiments and modelling: general discussion

Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches.

Water-Mediated Ionic Migration in Memristive Nanowires with a Tunable Resistive Switching Mechanism