1-W antimonide-based vertical external cavity surface emitting laser operating at 2-microm

artículo científico publicado en 2006

1-W red light generation by intracavity doubling in a 1240 nm GaInNAs semiconductor disk laser

1.22 μm GaInNAs Saturable Absorber Mirrors with Tailored Recovery Time

1.4 µm continuous-wave diamond Raman laser.

artículo científico publicado en 2017

1.55-μm Dilute Nitride SOAs with low temperature sensitivity for coolerless on-chip operation

1040 nm vertical external cavity surface emitting laser based on InGaAs quantum dots grown in Stranski-Krastanow regime

11 W single gain element dilute nitride disk laser emitting at 1180 nm

11 W single gain-chip dilute nitride disk laser emitting around 1180 nm.

artículo científico publicado en 2010

1180 nm GaInNAs quantum well based high power DBR laser diodes

1180 nm VECSEL with output power beyond 20 W

1180nm VECSEL with 50 W output power

1213nm semiconductor disk laser pumping of a Tm 3+ -doped tellurite glass laser

1220 nm mode-locked GaInNAs disk laser

134  μm VECSEL mode-locked with a GaSb-based SESAM

artículo científico publicado en 2018

1550 nm high-power tapered DBR-laser diodes

1μm saturable absorber with recovery time reduced by lattice mismatch

1 W at 617 nm generation by intracavity frequency conversion in semiconductor disk laser

2 watt 2 μm Tm/Ho fiber laser system passively Q-switched by antimonide semiconductor saturable absorber

2 μm InGaSb/GaSb laterally coupled distributed feedback laser fabricated by nanoimprint lithography

2-$\mu$m Mode-Locked Semiconductor Disk Laser Synchronously Pumped Using an Amplified Diode Laser

2.7 W tunable orange-red GaInNAs semiconductor disk laser

artículo científico publicado en 2007

3.5 W GaInNAs disk laser operating at 1220 nm

33 W continuous output power semiconductor disk laser emitting at 1275 nm.

artículo científico publicado en 2017

40-GHz GaInNAs-based passively mode-locked laser diode

50-ps Passively Mode-Locked Red Praseodymium Laser

scholarly article published 2014

615 nm GaInNAs VECSEL with output power above 10 W.

artículo científico publicado en 2015

7.4 W yellow GaInNAs-based semiconductor disk laser

article by T. Leinonen et al published 2011 in Electronics Letters

87  fs mode-locked Tm,Ho:CaYAlO4 laser at ∼2043  nm.

artículo científico publicado en 2018

>8W GaInNAs VECSEL emitting at 615 nm

A 7-W 1178nm GaInNAs based disk laser for guide star applications

A Mode-locked Bi-doped Fiber Laser

artículo científico

Ab initioand scanning tunneling microscopy study of an indium-terminated GaAs(100) surface: An indium-induced surface reconstruction change in thec(8×2)structure

scholarly article by J. J. K. Lång et al published 7 June 2010 in Physical Review B

Absorption recovery dynamics in 2µm GaSb-based SESAMs

Acidity sensor based on porphyrin self-assembled monolayers covalently attached to the surfaces of tapered fibres

article published in 2010

Advances in power scalable, tunable, and mode-locked semiconductor disk lasers

AlGaAs-based vertical-external-cavity surface-emitting laser exceeding 4  W of direct emission power in the 740–790  nm spectral range

artículo científico publicado en 2018

All-Optical Packet Envelope Detection Using a Slow Semiconductor Saturable Absorber Gate and a Semiconductor Optical Amplifier

All-Optical nand / nor Logic Gates Based on Semiconductor Saturable Absorber Etalons

All-optical NAND/NOR Logic Gates with Passive Nonlinear Etalon Exploiting Absorption Saturation in Semiconductor MQWs

artículo científico publicado en 2007

All-optical multiple wavelength conversion using ASE light and a passive vertical-cavity semiconductor gate

All-optical seed pulse extraction for packet synchronization based on self-induced effects in a vertical-cavity semiconductor gate

All-optical wavelength conversion in a vertical cavity semiconductor switch

An analysis of Hall mobility in as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs quantum wells

artículo científico publicado en 2012

Broadband semiconductor saturable absorber mirror at 1.55 [micro sign]m using Burstein-Moss shifted Ga0.47In0.53As/InP distributed Bragg reflector

Broadly tunable mode-locked Ho:YAG ceramic laser around 2.1 µm.

artículo científico publicado en 2016

Cavity-enhanced single photon emission from site-controlled In(Ga)As quantum dots fabricated using nanoimprint lithography

Characterization and operation of a broadband all-optical vertical cavity semiconductor wavelength converter

artículo científico publicado en 2006

Characterization of InGaAs and InGaAsN saturable absorber mirrors for high power mode locked sub-ps thin-disk lasers

Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers

Circular polarization switching and bistability in an optically injected 1300 nm spin-vertical cavity surface emitting laser

artículo científico

Compact microdisk cavity laser with GaInNAs/GaAs quantum well

Comparison of GaInNAs and GaInNAsSb solar cells grown by plasma-assisted molecular beam epitaxy

Comparison of metal/polymer back reflectors with half-sphere, blazed, and pyramid gratings for light trapping in III-V solar cells

scientific article published on 01 March 2018

Comparison of single-side and double-side pumping of membrane external-cavity surface-emitting lasers

scientific article published on 01 March 2019

Comparison of thermal management techniques for semiconductor disk lasers

Composition dependent growth dynamics in molecular beam epitaxy of GaInNAs solar cells

article

Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of photoluminescence enhancement

Contention Resolution by means of Packet Envelope Detection Circuit with a Slow Saturable Absorber-based Vertical Cavity Semiconductor Gate

Control of the Emitted Polarization in a 1310 nm spin-VCSEL Subject to Circularly Polarized Optical Injection

scholarly article published 2014

Control of the absorption recovery time in GaSb SESAMs

Data transmission at 1300 nm using optical interposer comprising hybrid integrated silicon waveguide and dilute nitride electroabsorption modulator

artículo científico publicado en 2018

Decreasing Defect-State Density of Al2 O3 /Ga x In1− x As Device Interfaces with InO x Structures

Detecting lateral composition modulation in dilute Ga(As,Bi) epilayers.

artículo científico publicado en 2015

Determination of composition and energy gaps of GaInNAsSb layers grown by MBE

article

Deterministic Switching of the Growth Direction of Self-Catalyzed GaAs Nanowires

artículo científico publicado en 2018

Development of Efficient Electrically Pumped Nanolasers based on InAlGaAs Tunnel Junction

Development of GaSb superluminescent LEDs for programmable light source for gas sensing

article

Dilute nitride and GaAs n-i-p-i solar cells

artículo científico publicado en 2012

Dilute nitride triple junction solar cells for space applications: Progress towards highest AM0 efficiency

Dilute nitride vertical-cavity gate for all-optical logic at 1.3 µm

Dilute nitrides tailor the wavelength of semiconductor disk lasers

Diode-pumped Tm:KY(WO4)2 laser passively modelocked with a GaSb-SESAM.

artículo científico publicado en 2017

Diode-pumped mode-locked Tm:LuAG laser at 2  μm based on GaSb-SESAM.

artículo científico publicado en 2017

Dynamics of time-resolved photoluminescence in GaInNAs and GaNAsSb solar cells

scientific article published on 17 February 2014

Effect of neutron irradiation on the capacitance hysteresis in GaAs Schottky diodes with self-assembled InAs quantum dots

Effects of (NH4)2S and NH4OH surface treatments prior to SiO2 capping and thermal annealing on 1.3 μm GaInAsN/GaAs quantum well structures

Effects of 7-MeV electron irradiation on photoluminescence from 1-eV GaInNAs-on-GaAs epilayers

Effects of electron irradiation on photoluminescence from 1-eV GaInNAs epilayers subject to thermal annealing

scholarly article published October 2012

Effects of heavy-ion and light-ion irradiation on the room temperature carrier dynamics of InGaAs/GaAs quantum wells

Effects of insertion of strain-engineering Ga(In)NAs layers on optical properties of InAs/GaAs quantum dots for high-efficiency solar cells

Effects of post-growth annealing on InGaAs quantum posts embedded in Schottky diodes

Effects of thinning and heating for TiO2/AlInP junctions

Efficient GaInNAs Gain Mirrors for Semiconductor Disk Lasers at 1.18 μm and 1.22 μm

Electrical switching of photoluminescence of single site-controlled InAs quantum dots

Enhancement of photocurrent in GaInNAs solar cells using Ag/Cu double-layer back reflector

Evidence of Optical Circular Dichroism in GaAs-Based Nanowires Partially Covered with Gold

Excitation energy-dependent nature of Raman scattering spectrum in GaInNAs/GaAs quantum well structures ⬇️

artículo científico publicado el 28 de noviembre de 2012

Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates

Fabrication and characterization of broadband superluminescent diodes for 2 μm wavelength

Femtosecond Neodymium-Doped Fiber Laser Operating in the 894–909-nm Spectral Range

scholarly article by M. Rusu et al published April 2004 in IEEE Photonics Technology Letters

Femtosecond neodymium-doped fiber laser operating in the 894- to 909-nm spectral range

scholarly article published 1 September 2004

Field Emission from Self-Catalyzed GaAs Nanowires.

artículo científico publicado en 2017

Flat-top temperature tuning response in periodically-poled nonlinear crystals

Formation and destabilization of Ga interstitials in GaAsN: Experiment and theory

scholarly article in Physical Review B, vol. 86 no. 19, November 2012

Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi

scientific article published on 30 April 2014

Frequency-Doubled VECSEL Employing a Volume Bragg Grating for Linewidth Narrowing

Frequency-Doubled Wafer-Fused 638 nm VECSEL with an Output Power of 5.6 W

Frequency-doubled passively Q-switched microchip laser producing 225  ps pulses at 671  nm.

artículo científico publicado en 2016

GaAs n-i-p-i solar cells with ion implanted selective contacts

article published in 2013

GaAs-SOI integration as a path to low-cost optical interconnects

GaInNAs solar cell with back surface reflector

GaN diode-pumping of a red semiconductor disk laser

GaN diode-pumping of red semiconductor disk laser

GaSb superluminescent diodes with broadband emission at 2.55 μm

GaSb-based SESAM mode-locked Tm:YAG ceramic laser at 2 µm.

artículo científico publicado en 2015

GaSb-based compounds tailored for MID-IR disk lasers

GaSb-based heterostructures for high power and pulsed laser operation

GaSb-based semiconductor saturable absorber mirrors for mode-locking 2 µm semiconductor disk lasers

Generation of Sub-100 ps Pulses at 532, 355, and 266 nm Using a SESAM Q-Switched Microchip Laser

Generation of high power (> 7W) yellow-orange radiation by frequency doubling of GaInNAs-based semiconductor disk laser

scholarly article published May 2011

Gradients of Be-dopant concentration in self-catalyzed GaAs nanowires

artículo científico publicado en 2019

Growth and properties of crystalline barium oxide on the GaAs(100) substrate

Harmonic mode locking by synchronous optical pumping of a saturable absorber with the residual pump

scientific article published on 01 March 2003

Harmonically mode-locked VECSELs for multi-GHz pulse train generation

artículo científico publicado en 2007

Harmonically mode-locked laser stabilized by semiconductor saturable absorber modulated with the residual pump

Harmonically mode-locked semiconductor disk lasers with multi-GHz repetition rate

High Efficiency Dilute Nitride Solar Cells: Simulations Meet Experiments

High Power 1100–1200 nm Semiconductor Disk Lasers

High current generation in dilute nitride solar cells grown by molecular beam epitaxy

High gain 1.3-μm GaInNAs SOA with fast gain dynamics and enhanced temperature stability

High power (23W) vertical external cavity surface emitting laser emitting at 1180 nm

High power (60 mW) GaSb-based 1.9 μm superluminescent diode with cavity suppression element

High power 1178 nm single-frequency MOPA based on OP-SDL and PBGF

High power VECSEL prototype emitting at 625 nm

High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm.

artículo científico publicado en 2007

High quality InP nanopyramidal frusta on Si

High-Power 1.5- $\mu$ m Broad Area Laser Diodes Wavelength Stabilized by Surface Gratings

High-Power 1180-nm GaInNAs DBR Laser Diodes

High-efficiency 20 W yellow VECSEL.

artículo científico publicado en 2014

High-efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD technique

High-efficiency tunable yellow-orange VECSEL with an output power of 20 W

scholarly article published 3 March 2014

High-efficiency yellow VECSEL with an output power of about 12 W

scholarly article published May 2013

High-gain 13  μm GaInNAs semiconductor optical amplifier with enhanced temperature stability for all-optical signal processing at 10  Gb/s

artículo científico publicado en 2015

High-power (>1 W) dilute nitride semiconductor disk laser emitting at 1240 nm

High-power and broadly tunable GaSb-based optically pumped VECSELs emitting near 2μm

High-power narrow-linewidth optically pumped dilute nitride disk laser with emission at 589 nm

High-power semiconductor disk laser based on InAs∕GaAs submonolayer quantum dots

High-power temperature-stable GaInNAs distributed Bragg reflector laser emitting at 1180  nm

artículo científico publicado en 2016

Highly nonlinear GaSb-based saturable absorber mirrors

Highly-efficient Ho:KY(WO4)2 thin-disk lasers at 2.06 µm

Ho:KY(WO4)2 thin-disk laser passively Q-switched by a GaSb-based SESAM

scientific article published on 01 April 2018

Identification of an isolated arsenic antisite defect in GaAsBi

Impact of the non-planar morphology of pre-patterned substrates on the structural and electronic properties of embedded site-controlled InAs quantum dots

Improving the current output of GaInNAs solar cells using distributed Bragg reflectors

Improving the current output of GaInNAs solar cells using distributed Bragg reflectors

Incorporation model of N into GaInNAs alloys grown by radio-frequency plasma-assisted molecular beam epitaxy

Influence of As/group-III flux ratio on defects formation and photovoltaic performance of GaInNAs solar cells

Influence of deep level impurities on modulation response of InGaP light emitting diodes

Influence of non-radiative recombination on photoluminescence decay time in GaInNAs quantum wells with Ga- and In-rich environments of nitrogen atoms

Instabilities in optically-pumped 1300nm dilute nitride spin-VCSELs: Experiment and theory

Instability of structural defects generated by electron irradiation in GaInNAs quantum wells

Integrated multi-wavelength mid-IR light source for gas sensing

Integrating III-V, Si, and polymer waveguides for optical interconnects: RAPIDO

Intracavity Sum-Frequency Generation in Dual-Wavelength Semiconductor Disk Laser

Investigation of diffusion in AlAs/GaAs distributed Bragg reflectors using HAADF STEM imaging

Investigation of the effect of surface passivation on microdisk lasers based on InGaAsN/GaAs quantum well active region

Large array of single, site-controlled InAs quantum dots fabricated by UV-nanoimprint lithography and molecular beam epitaxy

artículo científico publicado en 2012

Lasing action in low-resistance nanolasers based on tunnel junctions

scientific article published on 01 August 2019

Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP.

artículo científico publicado en 2010

Laterally-coupled distributed feedback InGaSb/GaSb diode lasers fabricated by nanoimprint lithography

Light-emitting diode emitting at 650 nm with 200-MHz small-signal modulation bandwidth

Light-trapping enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off

Lithography-free oxide patterns as templates for self-catalyzed growth of highly uniform GaAs nanowires on Si(111)

scientific article published on 01 July 2015

Long-wavelength fast semiconductor saturable absorber mirrors using metamorphic growth on GaAs substrates

Long-wavelength semiconductor saturable absorber mirrors using metamorphic InP grown on GaAs by molecular beam epitaxy

Low cost 60 ps, 1.33 MW peak power, 50 kHz repetition rate pulsed microchip laser fiber amplifier system

Low loss GaInNAs/GaAs gain waveguides with U-bend geometry for single-facet coupling in hybrid photonic integration

MBE grown GaInNAs-based multi-Watt disk lasers

MBE grown optically pumped semiconductor disk lasers emitting at 940nm

MBE of dilute-nitride optoelectronic devices

MQW laser dynamic behavior analysis based on small signal modulation regime simulation

Magnetotransport study on as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs strained quantum well structures

artículo científico publicado en 2014

Metamorphic growth of long-wavelength saturable absorber on GaAs substrates

Metamorphic growth of tensile strained GaInP on GaAs substrate

article published in 2010

Microchip Vertical-External Cavity Surface Emitting Laser using a concave-shaped diamond micromirror

Microchip laser Q-switched with GaInNAs/GaAs SESAM emitting 204 ps pulses at 1342 nm

Microdisk lasers based on GaInNAsSb/GaAsN quantum well active region

Mode locking in a bismuth fibre laser by using a SESAM

Mode-Locked Bi-Doped All-Fiber Laser With Chirped Fiber Bragg Grating

Mode-locked Bi-doped fiber laser

Mode-locked Tm,Ho:KLu(WO(4))(2) laser at 2060 nm using InGaSb-based SESAMs.

artículo científico publicado en 2015

Mode-locked VECSEL emitting 5 ps pulses at 675 nm.

artículo científico publicado en 2013

Mode-locked and Q-switched 2-µm fibre lasers based on semiconductor saturable absorber technology

Mode-locking of 2 μm Tm,Ho:YAG laser with GaInAs and GaSb-based SESAMs

artículo científico publicado en 2013

Modelocked GaSb disk laser producing 384 fs pulses at 2 [micro sign]m wavelength

Monolithic GaInNAsSb/GaAs VECSEL Operating at 1550 nm

Moth eye antireflection coated GaInP/GaAs/GaInNAs solar cell

scholarly article published 2014

Moth-eye antireflection coating fabricated by nanoimprint lithography on 1 eV dilute nitride solar cell

article by Juha Tommila et al published March 2012 in Progress in Photovoltaics

Multi-wavelength mid-IR light source for gas sensing

Multiple gain element GaInNAs disk laser generating narrow band (2.6 MHz) radiation at 1178 nm

Multiscale in modelling and validation for solar photovoltaics ⬇️

Nanoimprint lithography patterned GaAs templates for site-controlled InAs quantum dots

Nanostructures for light management in thin-film GaAs quantum dot solar cells

Narrow linewidth 1118/559 nm VECSEL based on strain compensated GaInAs/GaAs quantum-wells for laser cooling of Mg-ions

Narrow linewidth 1120 nm GaInAs/GaAs VECSEL for cooling Mg+ions

Narrow linewidth laterally-coupled 1.55 [micro sign]m DFB lasers fabricated using nanoimprint lithography

Narrow-linewidth operation of folded 1178nm VECSEL with twisted-mode cavity

scientific article published on 01 September 2019

Negative and positive magnetoresistance in GaInNAs/GaAs modulation-doped quantum well structures

Ni+-irradiated InGaAs/GaAs quantum wells: picosecond carrier dynamics

Novel Concepts for High-Efficiency Lightweight Space Solar Cells

Observation of atomic ordering of triple-period-A and -B type in GaAsBi

Observation of unusual metal-semiconductor interaction and metal-induced gap states at an oxide-semiconductor interface: The case of epitaxial BaO/Ge(100) junction

scholarly article in Physical Review B, vol. 92 no. 16, October 2015

Optical Bistability with Two Serially Integrated InP-SOAs on a Single Chip

Optical Energy Transfer and Loss Mechanisms in Coupled Intracavity Light Emitters

Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs

artículo científico publicado en 2014

Optical properties and thermionic emission in solar cells with InAs quantum dots embedded within GaNAs and GaInNAs

Optical properties of n- and p-type modulation doped GaAsBi/AlGaAs quantum well structures

Optical switching in a resonant Fabry–Perot saturable absorber

Optically Pumped Edge-Emitting GaAs-Based Laser With Direct Orange Emission

Optically Pumped Semiconductor Lasers for Precision Spectroscopic Applications

Optically pumped GaInNAs disk laser frequency doubled to 615 nm

Optically pumped VECSELs: review of technology and progress

article

Optically-pumped dilute nitride spin-VCSEL.

artículo científico publicado en 2012

Optimization of Ohmic Contacts to p-GaAs Nanowires

artículo científico publicado en 2019

Oxidation of the GaAs semiconductor at the Al2O3/GaAs junction

artículo científico publicado en 2015

Oxidation-Induced Changes in the ALD-Al2O3/InAs(100) Interface and Control of the Changes for Device Processing

artículo científico publicado en 2018

Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces

scholarly article in Physical Review B, vol. 83 no. 19, May 2011

Passively Mode-Locked Tm:LuAG Ceramic Laser

Passively Mode-Locked Tm:YAG Ceramic Laser at 2 μm

Passively mode-locked GaSb-based VECSELs emitting sub-400-fs pulses at 2 μm

article published in 2012

Passively mode-locked all-fiber bismuth laser with dispersion compensation by a chirped fiber Bragg grating

Passively mode-locked red VECSEL

Passively modelocked bi-directional vertical external ring cavity surface emitting laser

Perfect magnetic mirror and simple perfect absorber in the visible spectrum

scholarly article by C. A. Valagiannopoulos et al published 11 March 2015 in Physical Review B

Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

Performance assessment of multijunction solar cells incorporating GaInNAsSb

artículo científico publicado en 2014

Photo-Acoustic Spectroscopy Reveals Extrinsic Optical Chirality in GaAs-Based Nanowires Partially Covered with Gold

Photo-acoustic Spectroscopy of Resonant Absorption in III-V Semiconductor Nanowires

Photo-acoustic spectroscopy revealing resonant absorption of self-assembled GaAs-based nanowires.

artículo científico publicado en 2017

Photochemical properties of porphyrin films covering curved surfaces of optical fibers

Photocurrent oscillations in GaInNAs / GaAs multi-quantum well p-i-n structures

Photonic Logic Operations with Nonlinear Semiconductor Etalons Exploiting Saturable Absorption in Multiple Quantum Wells

Picosecond passively mode-locked GaSb-based semiconductor disk laser operating at 2 μm.

artículo científico publicado en 2010

Polarization resolved photoluminescence in GaAs1−xBix/GaAs quantum wells

Polarization switching and bistability in a 1300 nm spin-VCSEL subject to circularly polarized optical injection

scholarly article published December 2014

Post-growth annealing of type-II GaSb/GaAs quantum dots grown with different V/III ratios

Progress in Power Scaling and Wavelength Coverage of VECSELs

Properties and Applications of Resonant Nonlinear Semiconductor Reflectors

Properties of InAs Quantum Dots in Nanoimprint Lithography Patterned GaAs Pits

Pulsed bismuth fibre laser with the intracavity-compensated group velocity dispersion

Pulsed high-power yellow-orange VECSEL

scholarly article published 2 May 2014

Quantum-dot semiconductor disk lasers

Quantum-well Laser Emitting at 1.2 μm-1.3 μm Window Monolithically Integrated on Ge Substrate

Recent advances in the development of yellow-orange GaInNAs-based semiconductor disk lasers

article

Red Wavelength Range Microcavity Emitters

Removal of strain relaxation induced defects by flushing of InAs quantum dots

Resonant Absorption in GaAs-Based Nanowires by Means of Photo-Acoustic Spectroscopy

Resonant cavity light emitting diode for a polymer optical fibre system

Resonant cavity light-emitting diodes grown by solid source MBE

Room temperature electron spin relaxation in GaInNAs multiple quantum wells at 1.3μm

SESAM mode-locked Tm:CALGO laser at 2 µm

SESAM mode-locked Tm:CALGO laser at 2 μm

SESAM mode-locked red praseodymium laser.

artículo científico publicado en 2014

Selective area heteroepitaxy of InP nanopyramidal frusta on Si for nanophotonics

Selective area heteroepitaxy through nanoimprint lithography for large area InP on Si

Selective growth of GaAs nanostructures and subsequent guided self-assembly of InAs quantum dots on nanoimprint lithography patterned SiO2/GaAs substrates

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Semiconductor saturable absorbers with recovery time controlled by lattice mismatch and band-gap engineering

Short-wavelength GaInNAs semiconductor disk lasers

Short-wavelength GaInNAs/GaAs semiconductor disk lasers

Simulations of dilute nitride quantum well InGaAsN semiconductor lasers

article published in 2009

Simultaneous Dual-Wavelength Conversion With Multiresonant Saturable Absorption Vertical-Cavity Semiconductor Gate

Single-frequency 1178nm SDL/Yb-PBGF MOPA with an output power of 31 W

Single-frequency 571nm VECSEL for photo-ionization of magnesium

scholarly article published 3 June 2016

Singly resonant continuous-wave optical parametric oscillator with tunable output above 4 µm and low oscillation threshold

Site-controlled InAs quantum dot chains coupled to surface plasmons

Size-dependent properties of single InAs quantum dots grown in nanoimprint lithography patterned GaAs pits.

artículo científico publicado en 2013

Spectral Characteristics of Narrow-Linewidth High-Power 1180 nm DBR Laser With Surface Gratings

Spectral Narrowing and Locking of Vertical External-cavity Surface-emitting Lasers Using a Volume Bragg Grating

Spectral narrowing and locking of a vertical-external-cavity surface-emitting laser using an intracavity volume Bragg grating

artículo científico publicado en 2006

Spin relaxation and all-optical polarisation switching in GaInNAs multiple quantum wells

article

Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1−xBix epilayers

Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1-x Bi x /GaAs quantum wells.

artículo científico publicado en 2016

Stabilisation of a Vertical External-Cavity Surface-Emitting Laser using an intra-cavity high-reflectivity grating

Stabilization of passive harmonic mode-locking by amplitude modulation

Stable single- and dual-wavelength fiber laser mode locked and spectrum shaped by a Fabry-Perot saturable absorber.

artículo científico publicado en 2000

Stacked GaAs quantum dots fabricated by refilling of self-organized nanoholes: optical properties and post-growth annealing

artículo científico publicado en 2011

Strain compensated 1120nm GaInAs/GaAs vertical external-cavity surface-emitting laser grown by molecular beam epitaxy

Strain compensation of InGaAs/GaAs SDL gain mirrors grown by molecular beam epitaxy

Stretched-pulse fiber lasers based on semiconductor saturable absorbers

Structural Investigation of Uniform Ensembles of Self-Catalyzed GaAs Nanowires Fabricated by a Lithography-Free Technique.

artículo científico publicado en 2017

Structural and optical properties of InAs quantum dot chains grown on nanoimprint lithography structured GaAs with different pattern orientations

Structural characterization of InAs quantum dot chains grown by molecular beam epitaxy on nanoimprint lithography patterned GaAs(100)

artículo científico publicado en 2011

Structure of ordered oxide on InAs(100) surface

Study of nitrogen incorporation into GaInNAs: The role of growth temperature in molecular beam epitaxy

Sub-10 optical-cycle mode-locked Tm:(Lu2/3Sc1/3)2O3 mixed ceramic laser at 2057 nm

Sub-10 optical-cycle passively mode-locked Tm:(Lu2/3Sc1/3)2O3 ceramic laser at 2 µm

artículo científico publicado en 2018

Sub-100 fs pulse generation from a Tm,Ho:CALYO laser mode-locked by a GaSb-based SESAM at ~2043 nm

Sub-50 ps pulses at 620 nm obtained from frequency doubled 1240 nm diamond Raman laser

artículo científico publicado en 2017

Sub-Poissonian Narrowing of Length Distributions Realized in Ga-Catalyzed GaAs Nanowires.

artículo científico

Subpicosecond thin-disk laser oscillator with pulse energies of up to 25.9 microjoules by use of an active multipass geometry

artículo científico publicado en 2008

Synthesis and Characterization of Layered Tin Monoxide Thin Films with Monocrystalline Structure on III-V Compound Semiconductor

Te-doping of self-catalyzed GaAs nanowires

Temperature and magnetic field effect on oscillations observed in GaInNAs/GaAs multiple quantum wells structures

Temperature behaviour of resonant cavity light-emitting diodes at 650 nm

Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

Temperature dependence of photoluminescence for site-controlled InAs/GaAs quantum dot chains

Temperature-stable operation of a quantum dot semiconductor disk laser

The Role of Epitaxial Strain on the Spontaneous Formation of Bi-Rich Nanostructures in Ga(As,Bi) Epilayers and Quantum Wells

The Role of Groove Periodicity in the Formation of Site-Controlled Quantum Dot Chains.

artículo científico publicado en 2015

The effect of InGaAs strain-reducing layer on the optical properties of InAs quantum dot chains grown on patterned GaAs(100)

The influence of As/III pressure ratio on nitrogen nearest-neighbor environments in as-grown GaInNAs quantum wells

The influence of post-growth annealing on the optical properties of InAs quantum dot chains grown on pre-patterned GaAs(100)

artículo científico publicado en 2012

The influence of temperature on the photoluminescence properties of single InAs quantum dots grown on patterned GaAs.

artículo científico publicado en 2012

Thulium doped LuAG ceramics for passively mode locked lasers

artículo científico publicado en 2017

Tin-stabilized (1×2) and (1×4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations

Toward the Atomically Abrupt Interfaces of SiOx/Semiconductor Junctions

Treatment of telangiectasia on the cheeks with a compact yellow (585 nm) semiconductor laser and a green (532 nm) KTP laser: a randomized double-blinded split-face trial

artículo científico publicado en 2019

Tunable Raman Soliton Source Using Mode-Locked Tm–Ho Fiber Laser

Tunable Raman soliton source using mode-locked Tm/Ho fiber system

Tunable modelocked bismuth-doped soliton fibre laser

scholarly article by S. Kivistö et al published 2008 in Electronics Letters

Tunable self-seeded semiconductor disk laser operating at 2 [micro sign]m

Tunable vertical external cavity surface emitting laser operating at 2-¿m

Ultrafast all-optical switching of 3D photonic band gap crystals

article published in 2007

Ultrafast electroabsorption dynamics in a GaInNAs quantum well waveguide at 1.3μm

Ultrafast optical switching of photonic crystals

Ultrahigh precision nonlinear reflectivity measurement system for saturable absorber mirrors with self-referenced fluence characterization

artículo científico publicado en 2014

Unveiling and controlling the electronic structure of oxidized semiconductor surfaces: Crystalline oxidized InSb(100)(1 × 2)-O

scholarly article in Physical Review B, vol. 90 no. 4, July 2014

VECSEL systems for the generation and manipulation of trapped magnesium ions ⬇️

scholarly article by S. C. Burd et al published 8 November 2016 in Optica

VECSELs: Innovative light sources for PDT

scholarly article by Emmi Kantola et al published September 2015 in Photodiagnosis and Photodynamic Therapy

Variation of lattice constant and cluster formation in GaAsBi

article

Vertical Cavity Light Emitters for Plastic Optical Fibers

Visible-light-emitting diodes based on microcavity concepts

Wavelength Transparency of All-Optical Packet Envelope Detection Circuit for RZ-Format Optical Packet Switching Applications

Wet etching of dilute nitride GaInNAs, GaInNAsSb, and GaNAsSb alloys lattice-matched to GaAs

Yellow-red semiconductor disk lasers for biophotonics applications

scholarly article published 25 June 2010

~1200-nm tunable fiber vertical-cavity surface emitting laser