Lista de obras - Eric Tournié - Dominio Público Uruguay

3.3 µm interband-cascade resonant-cavity light-emitting diode with narrow spectral emission linewidth

Brewster "mode" in highly doped semiconductor layers: an all-optical technique to monitor doping concentration.

artículo científico publicado en 2014

Carrier recombination processes in GaAsN: from the dilute limit to alloying

Conduction-band crossover induced by misfit strain inInSb∕GaSbself-assembled quantum dots

scholarly article in Physical Review B, vol. 76 no. 19, November 2007

Direct evidence for the trigonal symmetry of shallow phosphorus acceptors in ZnSe

article by J. J. Davies et al published 6 November 2001 in Physical Review B

Epitaxial Integration of Antimonide-Based Semiconductor Lasers on Si

Fano-like resonances sustained by Si doped InAsSb plasmonic resonators integrated in GaSb matrix

artículo científico publicado en 2015

First orientation-patterned GaSb ridge waveguides fabrication and preliminary characterization for frequency conversion in the mid-infrared

GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55-μm

High-density InSb-based quantum dots emitting in the mid-infrared

High-density, uniform InSb∕GaSb quantum dots emitting in the midinfrared region

InAs-based quantum cascade lasers grown on on-axis (001) silicon substrate

InAs/GaSb short-period superlattice injection lasers operating in 2.5 [micro sign]m–3.5 [micro sign]m mid-infrared wavelength range

article published in 2007

InAs/GaSb/InSb short-period super-lattice diode lasers emitting near 3.3 [micro sign]m at room-temperature

Interband cascade Lasers with AlGaAsSb cladding layers emitting at 3.3 µm

scientific article published on 01 October 2019

Interface analysis of InAs/GaSb superlattice grown by MBE

Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy

Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy

Investigations of InSb-based quantum dots grown by molecular-beam epitaxy

Localized surface plasmon resonance frequency tuning in highly doped InAsSb/GaSb one-dimensional nanostructures

scientific article published on 08 September 2016

Long-wavelength strained-layer InAs/GaInAs single-quantum-well laser grown by molecular beam epitaxy on InP substrate

Low-loss orientation-patterned GaSb waveguides for mid-infrared parametric conversion

MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones

Micron-sized liquid nitrogen-cooled indium antimonide photovoltaic cell for near-field thermophotovoltaics

artículo científico publicado en 2019

Mid-IR lasing from highly tensile-strained, type II, GaInAs/GaSb quantum wells

Mid-Infrared Semiconductor Lasers

Molecular-beam epitaxy of InSb/GaSb quantum dots

Note: a high transmission Faraday optical isolator in the 9.2 μm range

artículo científico publicado en 2011

Online characterization of regulated and unregulated gaseous and particulate exhaust emissions from two-stroke mopeds: a chemometric approach.

artículo científico publicado en 2011

Quantum cascade lasers grown on silicon

Quantum cascade lasers grown on silicon.

artículo científico publicado en 2018

Quantum well interband semiconductor lasers highly tolerant to dislocations

Scattered light noise in gravitational wave interferometric detectors: A statistical approach

scholarly article

Semiconductor lasers

Silicon surface preparation for III-V molecular beam epitaxy

Silicon-on-insulator shortwave infrared wavelength meter with integrated photodiodes for on-chip laser monitoring.