Lista de obras - Giuseppe Iannaccone - Dominio Público Uruguay

A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry

article

A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs

An Open-Source Multiscale Framework for the Simulation of Nanoscale Devices

artículo científico publicado en 2014

Approaches to the tunneling time based on the Larmor clock and absorption probabilities as particular cases of the stay-time method

artículo científico publicado en 1994

Ballistic transport in nanoscale field effect transistors revealed by four-terminal DC characterization

article

Characteristic times in the motion of a particle

scientific article published on 01 June 1994

Compact formula for the density of states in a quantum well

artículo científico publicado en 1996

Comparison of advanced transport models for nanoscale nMOSFETs

Corrections to “a three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry” [Aug 06 1782-1788]

Coupled Mode Space Approach for the Simulation of Realistic Carbon Nanotube Field-Effect Transistors

Drain current computation in nanoscale nMOSFETs: Comparison of transport models

Effect of Dephasing on the Current Statistics of Mesoscopic Devices

artículo científico publicado en 2004

Electric field control of spin rotation in bilayer graphene

artículo científico publicado en 2010

Electrical properties of graphene-metal contacts

artículo científico publicado en 2017

Electronics based on two-dimensional materials

artículo científico

Experimental and theoretical investigation of quantum point contacts for the validation of models for surface states

Extraction of parameters of surface states from experimental test structures

First principles investigation of tunnel FETs based on nanoribbons from topological two-dimensional materials

artículo científico publicado en 2017

Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam.

artículo científico publicado en 2016

General relation between density of states and dwell times in mesoscopic systems ⬇️

artículo científico publicado en 1995

Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices.

artículo científico publicado en 2014

Growth-Induced Strain in Chemical Vapor Deposited Monolayer MoS2 : Experimental and Theoretical Investigation

artículo científico publicado en 2017

Hadron collider triggers with high-quality tracking at very high event rates

Heterojunction hybrid devices from vapor phase grown MoS2.

artículo científico publicado en 2014

High performance metal-insulator-graphene diodes for radio frequency power detection application.

artículo científico publicado en 2017

High-Performance 2D p-Type Transistors Based on GaSe Layers: An Ab Initio Study

article

Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source

scientific article published on 03 February 2020

Material-Device-Circuit Co-optimization of 2D Material based FETs for Ultra-Scaled Technology Nodes.

artículo científico publicado en 2017

Non-Invasive Charge Detectors

artículo científico publicado en 2006

On current transients in MoS2 Field Effect Transistors

artículo científico publicado en 2017

Performance of arsenene and antimonene double-gate MOSFETs from first principles. ⬇️

artículo científico publicado en 2016

Quantum engineering of transistors based on 2D materials heterostructures.

artículo científico publicado en 2018

Temperature Compensation of Silicon Lamé Resonators Using Etch Holes: Theory and Design Methodology

artículo científico publicado en 2017

Three-dimensional atomistic simulation of carbon nanotube FETs with realistic geometry

Ultralow Specific Contact Resistivity in Metal-Graphene Junctions via Contact Engineering

artículo científico publicado en 2018

Unified approach to electron transport in double-barrier structures

artículo científico publicado en 1995

Vertical transport in graphene-hexagonal boron nitride heterostructure devices.

artículo científico publicado en 2015

Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures.

artículo científico publicado en 2017

Lista de obras de Giuseppe Iannaccone

A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry

A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs

An Open-Source Multiscale Framework for the Simulation of Nanoscale Devices

Approaches to the tunneling time based on the Larmor clock and absorption probabilities as particular cases of the stay-time method

Ballistic transport in nanoscale field effect transistors revealed by four-terminal DC characterization

Characteristic times in the motion of a particle

Compact formula for the density of states in a quantum well

Comparison of advanced transport models for nanoscale nMOSFETs

Corrections to “a three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry” [Aug 06 1782-1788]

Coupled Mode Space Approach for the Simulation of Realistic Carbon Nanotube Field-Effect Transistors

Drain current computation in nanoscale nMOSFETs: Comparison of transport models

Effect of Dephasing on the Current Statistics of Mesoscopic Devices

Electric field control of spin rotation in bilayer graphene

Electrical properties of graphene-metal contacts

Electronics based on two-dimensional materials

Experimental and theoretical investigation of quantum point contacts for the validation of models for surface states

Extraction of parameters of surface states from experimental test structures

First principles investigation of tunnel FETs based on nanoribbons from topological two-dimensional materials

Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam.

General relation between density of states and dwell times in mesoscopic systems ⬇️

Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices.

Growth-Induced Strain in Chemical Vapor Deposited Monolayer MoS2 : Experimental and Theoretical Investigation

Hadron collider triggers with high-quality tracking at very high event rates

Heterojunction hybrid devices from vapor phase grown MoS2.

High performance metal-insulator-graphene diodes for radio frequency power detection application.

High-Performance 2D p-Type Transistors Based on GaSe Layers: An Ab Initio Study

Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source

Material-Device-Circuit Co-optimization of 2D Material based FETs for Ultra-Scaled Technology Nodes.

Non-Invasive Charge Detectors

On current transients in MoS2 Field Effect Transistors

Performance of arsenene and antimonene double-gate MOSFETs from first principles. ⬇️

Quantum engineering of transistors based on 2D materials heterostructures.

Temperature Compensation of Silicon Lamé Resonators Using Etch Holes: Theory and Design Methodology

Three-dimensional atomistic simulation of carbon nanotube FETs with realistic geometry

Ultralow Specific Contact Resistivity in Metal-Graphene Junctions via Contact Engineering

Unified approach to electron transport in double-barrier structures

Vertical transport in graphene-hexagonal boron nitride heterostructure devices.

Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures.