"Genetically engineered" nanoelectronics

+Level Spectrum Of Single Gated As Donors

2D tunnel transistors for ultra-low power applications: Promises and challenges

article

3-D atomistic nanoelectronic modeling on high performance clusters: multimillion atom simulations

A Generalized Tunneling Formula for Quantum Device Modeling

article

A Multiscale Modeling of Triple-Heterojunction Tunneling FETs ⬇️

A Parallel Sparse Linear Solver for Nearest-Neighbor Tight-Binding Problems

A Study of Alloyed Nanowires from Two Perspectives: Approximate Dispersion and Transmission

article

A Study of Temperature-dependent Properties of N-type d-doped Si Band-structures in Equilibrium

article published in 2009

A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry

article

A Tight Binding Study of Strain-Reduced Confinement Potentials in Identical and Non-Identical InAs/GaAs Vertically Stacked Quantum Dots

A Tight-Binding Study of the Ballistic Injection Velocity for Ultrathin-Body SOI MOSFETs

A comprehensive atomistic analysis of bandstructure velocities in si nanowires

article published in 2010

A high-current InP-channel triple heterojunction tunnel transistor design

article

A multi-level parallel simulation approach to electron transport in nano-scale transistors

article

A new method to achieve RF linearity in SOI nanowire MOSFETs

A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations

article

A single-atom transistor

artículo científico publicado en 2012

A tight-binding study of channel modulation in atomic-scale Si:P nanowires

A tight-binding study of single-atom transistors.

artículo científico publicado en 2014

A tunnel FET design for high-current, 120 mV operation

A two-dimensional domain decomposition technique for the simulation of quantum-scale devices

ABACUS and AQME: Semiconductor Device and Quantum Mechanics Education on nanoHUB.org

scholarly article published May 2009

Accurate six-band nearest-neighbor tight-binding model for the π-bands of bulk graphene and graphene nanoribbons

article

Achieving a higher performance in bilayer graphene FET - strain engineering

Adaptive quadrature for sharply spiked integrands

Advancing nanoelectronic device modeling through peta-scale computing and deployment on nanoHUB

Allowed wavevectors under the application of incommensurate periodic boundary conditions

article

Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs

article

An atomistic model for the simulation of acoustic phonons, strain distribution, and Grüneisen coefficients in zinc-blende semiconductors

article

An efficient algorithm to calculate intrinsic thermoelectric parameters based on Landauer approach

An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. I. Model and validation

article

An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. II. Application—Effect of quantum confinement and homogeneous strain on Cu c

Anisotropic strain in SmSe and SmTe: Implications for electronic transport ⬇️

scholarly article in Physical Review B, vol. 90 no. 24, December 2014

Approximate bandstructures of semiconductor alloys from tight-binding supercell calculations

Archimedes, the free Monte Carlo simulator: A GNU package for submicron semiconductor devices on nanoHUB

Atomistic Approach for Nanoscale Devices at the Scaling Limit and Beyond– Valley Splitting in Si

Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

article

Atomistic Modeling of Realistically Extended Semiconductor Devices with NEMO and OMEN

Atomistic Simulation of Non-Degeneracy and Optical Polarization Anisotropy in Pyramidal Quantum Dots

Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part I: Models and Benchmarks

article

Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part II: Applications

Atomistic Tight-Binding Study of Contact Resistivity in Si/SiGe PMOS Schottky Contacts

Atomistic approach to alloy scattering in Si1−xGex

Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

article

Atomistic modeling of metallic nanowires in silicon

artículo científico publicado en 2013

Atomistic modeling of the phonon dispersion and lattice properties of free-standing (100) Si nanowires

Atomistic modeling of the thermoelectric power factor in ultra-scaled Silicon nanowires

Atomistic nanoelectronic device engineering with sustained performances up to 1.44 PFlop/s

Atomistic non-equilibrium Green’s function simulations of Graphene nano-ribbons in the quantum hall regime

scholarly article by Roksana Golizadeh-Mojarad et al published 2 February 2008 in Journal of Computational Electronics

Atomistic quantum transport approach to time-resolved device simulations

Atomistic simulation of nanowires in thesp3d5s*tight-binding formalism: From boundary conditions to strain calculations

scholarly article in Physical Review B, vol. 74 no. 20, November 2006

Atomistic simulation of phonon and alloy limited hole mobility in Si1-xGexnanowires

article

Atomistic simulation of steep subthreshold slope Bi-layer MoS 2 transistors

article

Atomistic simulation on gate-recessed InAs/GaSb TFETs and performance benchmark

Atomistic simulations for SiGe pMOS devices — Bandstructure to transport

Atomistic simulations of adiabatic coherent electron transport in triple donor systems

scholarly article in Physical Review B, vol. 80 no. 3, July 2009

Atomistic simulations of long-range strain and spatial asymmetry molecular states of seven quantum dots

Atomistic study of electronic structure of PbSe nanowires

article published in 2011

Automated grid probe system to improve end-to-end grid reliability for a science gateway

Ballistic hole injection velocity analysis in Ge UTB pMOSFETs: Dependence on body thickness, orientation and strain

Band-Structure Effects on the Performance of III–V Ultrathin-Body SOI MOSFETs

Bandstructure Effects in Silicon Nanowire Electron Transport

article published in 2008

Bandstructure Effects in Silicon Nanowire Hole Transport

article published in 2008

Bandstructure effects in ballistic nanoscale MOSFETs

Boundary conditions for the electronic structure of finite-extent embedded semiconductor nanostructures

scholarly article in Physical Review B, vol. 69 no. 4, January 2004

Brillouin zone unfolding method for effective phonon spectra ⬇️

scholarly article in Physical Review B, vol. 90 no. 20, November 2014

Brillouin-zone unfolding of perfect supercells having nonequivalent primitive cells illustrated with aSi∕Getight-binding parameterization

scholarly article in Physical Review B, vol. 76 no. 3, July 2007

Building and deploying community nanotechnology software tools on nanoHUB.org - atomistic simulations of multimillion-atom quantum dot nanostructures

Building semiconductor nanostructures atom by atom

Büttiker probes for dissipative phonon quantum transport in semiconductor nanostructures

Calculation of phonon spectrum and thermal properties in suspended 〈100〉 In X Ga1−X As nanowires

Can Homojunction Tunnel FETs Scale Below 10 nm? ⬇️

article by Hesameddin Ilatikhameneh et al published January 2016 in IEEE Electron Device Letters

Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs

Characterization and Modeling of Subfemtofarad Nanowire Capacitance Using the CBCM Technique

Characterizing Si:P quantum dot qubits with spin resonance techniques

artículo científico publicado en 2016

Coherent control of a single ²⁹Si nuclear spin qubit ⬇️

artículo científico publicado en 2014

Coherent electron transport by adiabatic passage in an imperfect donor chain

scholarly article in Physical Review B, vol. 82 no. 15, October 2010

Combination of Equilibrium and Nonequilibrium Carrier Statistics Into an Atomistic Quantum Transport Model for Tunneling Heterojunctions

article published in 2017

Computational Electronics

article published in 2010

Computational Study of the Electronic Performance of Cross-Plane Superlattice Peltier Devices

Computational Study on the Performance of Si Nanowire pMOSFETs Based on the $k \cdot p$ Method

Computational aspects of the three-dimensional feature-scale simulation of silicon-nanowire field-effect sensors for DNA detection

Computational nanoelectronics research and education at nanoHUB.org

Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method

article

Computing entries of the inverse of a sparse matrix using the FIND algorithm

Conductance spectroscopy in coupled quantum dots

artículo científico publicado en 1994

Conduction-band tight-binding description for Si applied to P donors

scholarly article in Physical Review B, vol. 72 no. 19, November 2005

Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET

Contact Block Reduction method for ballistic quantum transport with semi-empirical sp 3 d 5 s* tight binding band models

Contact modeling and analysis of InAs HEMT transistors

article

Control of interlayer physics in 2H transition metal dichalcogenides

Corrections to “a three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry” [Aug 06 1782-1788]

Corrigendum: Characterizing Si:P quantum dot qubits with spin resonance techniques

artículo científico publicado en 2016

Coupled Mode Space Approach for the Simulation of Realistic Carbon Nanotube Field-Effect Transistors

Creating impact in the digital space: digital practice dependency in communities of digital scientific innovations

article

Current density and continuity in discretized models

Current density and continuity in discretized models

Cyber-Enabled Simulations in Nanoscale Science and Engineering

article published in 2010

Dependence of Injection Velocity and Capacitance of Si Nanowires on Diameter, Orientation, and Gate Bias: An Atomistic Tight-Binding Study

article

Design Guidelines for Sub-12 nm Nanowire MOSFETs

Design Guidelines for True Green LEDs and High Efficiency Photovoltaics Using ZnSe/GaAs Digital Alloys

article by Samarth Agarwal et al published 2010 in Electrochemical and Solid-State Letters

Design Rules for High Performance Tunnel Transistors From 2-D Materials ⬇️

article

Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs

article

Design and Simulation of Two-Dimensional Superlattice Steep Transistors

article

Design concepts of terahertz quantum cascade lasers: Proposal for terahertz laser efficiency improvements

article by Tillmann Kubis et al published 27 December 2010 in Applied Physics Letters

Design of high-current L-valley GaAs=AlAs 0.56 Sb 0.44 /InP (111) ultra-thin-body nMOSFETs

Design of three-well indirect pumping terahertz quantum cascade lasers for high optical gain based on nonequilibrium Green’s function analysis

Design principles for HgTe based topological insulator devices

Design space for low sensitivity to size variations in [110] PMOS nanowire devices: the implications of anisotropy in the quantization mass

artículo científico publicado en 2009

Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors

article

Designing a large scale quantum computer with atomistic simulations

Determination of the eigenstates and wavefunctions of a single gated As donor

Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory

scholarly article in Physical Review B, vol. 66 no. 12, September 2002

Dielectric Engineered Tunnel Field-Effect Transistor ⬇️

article

Dimensionality in metal-oxide-semiconductor field-effect transistors: A comparison of one-dimensional and two-dimensional ballistic transistors

article

Disorder induced broadening in multimillion atom alloyed quantum dot systems

Distributed non-equilibrium Green’s function algorithms for the simulation of nanoelectronic devices with scattering

Does the low hole transport mass in 〈110〉 and 〈111〉 Si nanowires lead to mobility enhancements at high field and stress: A self-consistent tight-binding study

article

Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory. ⬇️

artículo científico publicado en 2015

Dramatic Impact of Dimensionality on the Electrostatics of P-N Junctions and Its Sensing and Switching Applications

Editorial

Effect of anharmonicity of the strain energy on band offsets in semiconductor nanostructures

article published in 2004

Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors

artículo científico publicado en 2014

Effect of electron-nuclear spin interactions for electron-spin qubits localized in InGaAs self-assembled quantum dots

Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots

artículo científico publicado en 2004

Effective-mass reproducibility of the nearest-neighborsp3s*models: Analytic results

article

Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells

Effects of interface roughness scattering on RF performance of nanowire transistors

article

Effects of interface roughness scattering on radio frequency performance of silicon nanowire transistors

article

Efficient I-V simulation of quantum devices using full bandstructure models

Efficient and realistic device modeling from atomic detail to the nanoscale

article

Eigenvalue solvers for atomistic simulations of electronic structures with NEMO-3D

Elastic and inelastic scattering in quantum dots in the Coulomb-blockade regime

article

Electric field reduced charging energies and two-electron bound excited states of single donors in silicon

article

Electrically Tunable Bandgaps in Bilayer MoS₂.

artículo científico publicado en 2015

Electrically controlling single-spin qubits in a continuous microwave field ⬇️

artículo científico publicado en 2015

Electrically doped 2D material tunnel transistor

article

Electrically doped WTe 2 tunnel transistors

article

Electron transport in nano-scaled piezoelectronic devices

scholarly article by Zhengping Jiang et al published 13 May 2013 in Applied Physics Letters

Electron-hole correlations in semiconductor quantum dots with tight-binding wave functions

article

Electronic Properties of Silicon Nanowires

article

Electronic Structure of Si/InAs Composite Channels

Electronic structure and transmission characteristics of SiGe nanowires

article

Electronic structure of realistically extended atomistically resolved disordered Si:Pδ-doped layers

scholarly article in Physical Review B, vol. 84 no. 20, November 2011

Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping

EnergyDispersion Relations for Holes in Silicon Quantum Wells and Quantum Wires

Engineered valley-orbit splittings in quantum-confined nanostructures in silicon

scholarly article in Physical Review B, vol. 83 no. 19, May 2011

Engineering Nanowire n-MOSFETs at $L_{g}<8~{\rm nm}$

Engineering the optical transitions of self-assembled quantum dots

Enhanced valence force field model for the lattice properties of gallium arsenide

article

Enhancement of thermoelectric efficiency by uniaxial tensile stress in n-type GaAs nanowires

Erratum: Effective-mass reproducibility of the nearest-neighborsp3s*models: Analytic results [Phys. Rev. B56, 4102 (1997)]

article

Erratum: Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade [Phys. Rev. Lett.107, 136602 (2011)]

artículo científico publicado en 2013

Evolution time and energy uncertainty

Evolutionary Computation Technologies for the Automated Design of Space Systems

scholarly article

Evolutionary computation technologies for space systems

Evolutionary computing for spacecraft power subsystem design search and optimization

Evolutionary design of electronic devices and circuits

Experimental and atomistic theoretical study of degree of polarization from multilayer InAs/GaAs quantum dot stacks

scholarly article in Physical Review B, vol. 84 no. 11, September 2011

Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm)

scholarly article by M. Usman et al published 15 May 2011 in Journal of Applied Physics

Experimental verification of an optical negative-index material

Experimentally verified quantum device simulations based on multiband models, Hartree self-consistency, and scattering assisted charging

article

Explicit screening full band quantum transport model for semiconductor nanodevices

Exploring channel doping designs for high-performance tunneling FETs

Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors

article

Feasibility, accuracy, and performance of contact block reduction method for multi-band simulations of ballistic quantum transport

Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors ⬇️

artículo científico publicado en 2016

Finite difference schemes for k ⋅ p models: A comparative study

article

From Fowler–Nordheim to Nonequilibrium Green’s Function Modeling of Tunneling ⬇️

From NEMO1D and NEMO3D to OMEN: Moving towards atomistic 3-D quantum transport in nano-scale semiconductors

scholarly article published December 2008

Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs

Full band atomistic modeling of homo-junction InGaAs band-to-band tunneling diodes including band gap narrowing

Full band modeling of the excess current in a delta-doped silicon tunnel diode

article

Full-band and atomistic simulation of n- and p-doped double-gate MOSFETs for the 22nm technology node

article published in 2008

Full-band and atomistic simulation of realistic 40 nm InAs HEMT

Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts

article

Full-band study of ultra-thin Si:P nanowires

Fullband Study of Ultra-Scaled Electron and Hole SiGe Nanowire FETs

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

artículo científico publicado en 2008

Gate-inducedg-factor control and dimensional transition for donors in multivalley semiconductors

scholarly article in Physical Review B, vol. 80 no. 15, October 2009

General Retarded Contact Self-energies in and beyond the Non-equilibrium Green's Functions Method

Generation and intensity-correlation measurements of the real Gaussian field

artículo científico publicado en 1990

Genetically engineered microelectronic infrared filters

Giant quasiparticle bandgap modulation in graphene nanoribbons supported on weakly interacting surfaces

Grain boundary resistance in nanoscale copper interconnections

HUB is where the heart is

article by Mark Lundstrom et al published March 2008 in IEEE nanotechnology magazine

High precision quantum control of single donor spins in silicon

artículo científico publicado en 2007

High-Current Tunneling FETs With (110) Orientation and a Channel Heterojunction

High-current InP-based triple heterojunction tunnel transistors

article

Highly tunable exchange in donor qubits in silicon ⬇️

Hub-based Simulation and Graphics Hardware Accelerated Visualization for Nanotechnology Applications

scholarly article by Wei Qiao et al published September 2006 in IEEE Transactions on Visualization and Computer Graphics

III-N heterostructure devices for low-power logic

In-surface confinement of topological insulator nanowire surface states

article published in 2015

Incoherent transport in NEMO5: realistic and efficient scattering on phonons

Increasing Contributions in an Online Scientific Community: The Effect of Virtual Rewards, Social Messages and Observation Cuess

article published in 2013

Indirect Bandgap-Like Current Flow in Direct Bandgap Electron Resonant Tunneling Diodes

artículo científico publicado en 2001

Indirect Bandgap-Like Current Flow in Direct Bandgap Electron Resonant Tunneling Diodes

artículo científico publicado en 2001

Indirectly pumped 3.7 THz InGaAs/InAlAs quantum-cascade lasers grown by metal-organic vapor-phase epitaxy

artículo científico publicado en 2012

Indium gallium arsenide on silicon interband tunnel diodes for NDR-based memory and steep subthreshold slope transistor applications

article

Influence of cross-section geometry and wire orientation on the phonon shifts in ultra-scaled Si nanowires

Influence of vacancies on metallic nanotube transport properties

Innovative characterization techniques for ultra-scaled FinFETs

Insights from simple models for surface states in nanostructures

Interactions of Fano resonances in the transmission of an Aharonov-Bohm ring with two embedded quantum dots in the presence of a magnetic field

article

Interactive Analytic Systems for Understanding the Scholarly Impact of Large-Scale E-science Cyberenvironments

Interface Trap Density Metrology of State-of-the-Art Undoped Si n-FinFETs

scholarly article by Giuseppe C. Tettamanzi et al published April 2011 in IEEE Electron Device Letters

Interface effects in tunneling models with identical real and complex dispersions

article

Interface roughness and polar optical phonon scattering in RTDs

article

Interface roughness, polar optical phonons, and the valley current of a resonant tunneling diode

article

Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs

scholarly article by Abhijeet Paul et al published 15 December 2011 in Journal of Applied Physics

Interface-induced heavy-hole/light-hole splitting of acceptors in silicon ⬇️

Interface-induced spin-orbit interaction in silicon quantum dots and prospects for scalability

artículo científico publicado en 2018

Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETs

Investigation of In_xGa_{1-x}As Ultra-Thin-Body Tunneling FETs Using a Full-Band and Atomistic Approach

Investigation of device parameters for field-effect DNA-sensors by three-dimensional simulation

Investigation of ripple-limited low-field mobility in large-scale graphene nanoribbons

article

Laser-bandwidth-induced fluctuations in the intensity transmitted by a Fabry-Pérot interferometer

artículo científico publicado en 1991

Leakage-Reduction Design Concepts for Low-Power Vertical Tunneling Field-Effect Transistors

Learning and research in the cloud

artículo científico publicado en 2013

Lifetime-enhanced transport in silicon due to spin and valley blockade.

artículo científico publicado en 2011

Limits to metallic conduction in atomic-scale quasi-one-dimensional silicon wires

artículo científico publicado en 2014

Low rank approximation method for efficient Green's function calculation of dissipative quantum transport

Low-temperature thermal transport and thermopower of monolayer transition metal dichalcogenide semiconductors

artículo científico publicado en 2017

Many-body levels of optically excited and multiply charged InAs nanocrystals modeled by semiempirical tight binding

scholarly article in Physical Review B, vol. 66 no. 23, December 2002

Mapping donor electron wave function deformations at a sub-Bohr orbit resolution.

artículo científico publicado en 2009

Material Selection for Minimizing Direct Tunneling in Nanowire Transistors

article

Million Atom Electronic Structure and Device Calculations on Peta-Scale Computers

Mode space tight binding model for ultra-fast simulations of III-V nanowire MOSFETs and heterojunction TFETs

Model development for lattice properties of gallium arsenide using parallel genetic algorithm

article

Modeling and simulation of field-effect biosensors (BioFETs) and their deployment on the nanoHUB

Modeling fluctuations in the threshold voltage and ON-current and threshold voltage fluctuation due to random telegraph noise

Modified valence force field approach for phonon dispersion: from zinc-blende bulk to nanowires

More Moore landscape for system readiness - ITRS2.0 requirements

Moving Toward Nano-TCAD Through Multimillion-Atom Quantum-Dot Simulations Matching Experimental Data

scholarly article by M. Usman et al published May 2009 in IEEE Nanotechnology Magazine

Multi-scale, multi-physics NEGF quantum transport for nitride LEDs

Multiband tight-binding model for strained and bilayer graphene from DFT calculations

Multiband transmission calculations for nanowires using an optimized renormalization method

article

Multimillion Atom Simulations with Nemo3D

Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs

scholarly article by Neerav Kharche et al published July 2011 in IEEE Transactions on Electron Devices

Multiscale Modeling of a Quantum Dot Heterostructure

Multiscale transport simulation of nanoelectronic devices with NEMO5

artículo científico publicado en 2016

NEMO-3D based atomistic simulation of a double quantum dot structure for spin-blockaded transport

NEMO5: A Parallel Multiscale Nanoelectronics Modeling Tool

article

NEMO5: Predicting MoS 2 heterojunctions

NEMO5: realistic and efficient NEGF simulations of GaN light-emitting diodes

NEMO: general release of a new comprehensive quantum device simulator

article

NanoHUB.org - the ABACUS tool suite as a framework for semiconductor education courses

NanoHUB.org Tutorial: Education Simulation Tools

Nanoelectronic 3-D (NEMO 3-D) simulation of multimillion atom quantum dot systems

Nanoelectronics: Metrology and Computation

scholarly article by Mark Lundstrom et al published 2007 in AIP Conference Proceedings

Network for Computational Nanotechnology - a strategic plan for global knowledge transfer in research and education

Non-equilibrium Green's functions method: Non-trivial and disordered leads

Non-equilibrium Green’s function (NEGF) simulation of metallic carbon nanotubes including vacancy defects

Non-primitive rectangular cells for tight-binding electronic structure calculations

Noninvasive spatial metrology of single-atom devices

artículo científico publicado en 2013

Novel III-N heterostructure devices for low-power logic and more

Numerical approximations to the treatment of interface roughness scattering in resonant tunnelling diodes

article

Numerical guidelines for setting up a k.p simulator with applications to quantum dot heterostructures and topological insulators

Numerical strategies towards peta-scale simulations of nanoelectronics devices

OMEN an Atomistic and Full-Band Quantum Transport Simulator for post-CMOS Nanodevices

Observation of 1D behavior in Si nanowires: toward high-performance TFETs

artículo científico publicado en 2012

Off-center electron transport in resonant tunneling diodes due to incoherent scattering

scholarly article in Physical Review B, vol. 68 no. 11, September 2003

Off-zone-center or indirect band-gap-like hole transport in heterostructures

scholarly article in Physical Review B, vol. 63 no. 19, April 2001

Ohm's law survives to the atomic scale

artículo científico publicado en 2012

On the Validity of the Parabolic Effective-Mass Approximation for the I–V Calculation of Silicon Nanowire Transistors

article

On the Validity of the Top of the Barrier Quantum Transport Model for Ballistic Nanowire MOSFETs

On the bandstructure velocity and ballistic current of ultra-narrow silicon nanowire transistors as a function of cross section size, orientation, and bias

article

Optical TCAD on the Net: A tight-binding study of inter-band light transitions in self-assembled InAs/GaAs quantum dot photodetectors

Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations

article

Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots

Optimum High-k Oxide for the Best Performance of Ultra-Scaled Double-Gate MOSFETs ⬇️

Orbital Stark effect and quantum confinement transition of donors in silicon

artículo científico publicado en 2009

P-Type Tunnel FETs With Triple Heterojunctions ⬇️

Performance Comparisons of III–V and Strained-Si in Planar FETs and Nonplanar FinFETs at Ultrashort Gate Length (12 nm)

Performance Prediction of Ultrascaled SiGe/Si Core/Shell Electron and Hole Nanowire MOSFETs

Performance analysis of a Ge/Si core/shell nanowire field-effect transistor

artículo científico publicado en 2007

Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness

article

Performance analysis of ultra-scaled InAs HEMTs

Performance comparisons of tunneling field-effect transistors made of InSb, Carbon, and GaSb-InAs broken gap heterostructures

article

Performance degradation due to thicker physical layer of high k oxide in ultra-scaled MOSFETs and mitigation through electrostatics design

Performance degradation of superlattice MOSFETs due to scattering in the contacts

Performance enhancement of GaAs UTB pFETs by strain, orientation and body thickness engineering

Performance evaluation of ballistic silicon nanowire transistors with atomic-basis dispersion relations

article

Performance limitations of graphene nanoribbon tunneling FETS due to line edge roughness

Phonon-limited mobility and injection velocity in n- and p-doped ultrascaled nanowire field-effect transistors with different crystal orientations

article

Physical oxide thickness extraction and verification using quantum mechanical simulation

article

Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

article

Practical Considerations in Cloud Utilization for the Science Gateway nanoHUB.org

Practical application of zone-folding concepts in tight-binding calculations

scholarly article in Physical Review B, vol. 71 no. 11, March 2005

Probing scattering mechanisms with symmetric quantum cascade lasers

artículo científico publicado en 2013

Proposal of ZnSe/GaAs digital alloys for high band gap solar cells and true green LEDs

scholarly article published June 2009

Proximity induced ferromagnetism, superconductivity, and finite-size effects on the surface states of topological insulator nanostructures ⬇️

scholarly article by Parijat Sengupta et al published 28 January 2015 in Journal of Applied Physics

Publisher's Note: “Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations” [J. Appl. Phys. 117, 174312 (2015)]

article

Publisher’s Note: Engineered valley-orbit splittings in quantum-confined nanostructures in silicon [Phys. Rev. B83, 195323 (2011)]

scholarly article in Physical Review B, vol. 83 no. 23, June 2011

QUANTUM SIMULATIONS OF DUAL GATE MOSFET DEVICES: BUILDING AND DEPLOYING COMMUNITY NANOTECHNOLOGY SOFTWARE TOOLS ON NANOHUB.ORG

Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations

article published in 2011

Quantitative simulation of a resonant tunneling diode

article

Quantum Confined Stark Shift and Ground State Optical Transition Rate in [100] Laterally Biased InAs/GaAs Quantum Dots

article

Quantum Transport Simulation of III-V TFETs with Reduced-Order $$ \varvec{k} \cdot \varvec{p} $$ k · p Method ⬇️

article published in 2016

Quantum Transport in AlGaSb/InAs TFETs With Gate Field In-Line With Tunneling Direction

Quantum approach to electronic noise calculations in the presence of electron-phonon interactions

scholarly article in Physical Review B, vol. 82 no. 12, September 2010

Quantum cascade laser gain medium modeling using a second-nearest-neighbor tight-binding model

article

Quantum cascade laser simulation using an sp/sup 3/s* full Brillouin zone tight-binding model

article

Quantum corrected drift-diffusion simulation for prediction of CMOS scaling

Quantum device simulation with a generalized tunneling formula

article

Quantum dot lab: an online platform for quantum dot simulations

Quantum kinetic analysis of mesoscopic systems: Linear response

article

Quantum simulation of the Hubbard model with dopant atoms in silicon ⬇️

artículo científico publicado en 2016

Quantum transport in NEMO5: Algorithm improvements and high performance implementation

Quantum transport in ultra-scaled phosphorous-doped silicon nanowires

Quantum transport with spin dephasing: A nonequlibrium Green’s function approach

scholarly article in Physical Review B, vol. 76 no. 4, July 2007

Rate equations for the phonon peak in resonant-tunneling structures

artículo científico publicado en 1993

Rate equations from the Keldysh formalism applied to the phonon peak in resonant-tunneling diodes

artículo científico publicado en 1993

Research in computing-intensive simulations for nature-oriented civil-engineering and related scientific fields, using machine learning and big data: an overview of open problems

artículo científico publicado en 2023

Resolution of Resonances in a General Purpose Quantum Device Simulator (NEMO)

article

Resonant tunneling in disordered materials such as SiO/sub 2//Si/SiO/sub 2/

article

Resonant tunneling through quantum-dot arrays

article

Resonant-tunneling diodes with emitter prewells

Role of interface roughness scattering in self-consistent resonant-tunneling-diode simulations

article

Role of surface orientation on atomic layer deposited Al2O3/GaAs interface structure and Fermi level pinning: A density functional theory study

Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes

artículo científico publicado en 1998

Rough interfaces in THz quantum cascade lasers

Saving Moore's Law Down To 1 nm Channels With Anisotropic Effective Mass ⬇️

artículo científico publicado en 2016

Scalable GaSb/InAs Tunnel FETs With Nonuniform Body Thickness ⬇️

Scaling Theory of Electrically Doped 2D Transistors ⬇️

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Scaling effect on specific contact resistivity in nano-scale metal-semiconductor contacts

Scattering in Si-nanowires — Where does it matter?

scholarly article published June 2010

Self-Consistent Simulations of Nanowire Transistors Using Atomistic Basis Sets

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Sensitivity Challenge of Steep Transistors

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Shape and orientation effects on the ballistic phonon thermal properties of ultra-scaled Si nanowires

Si tight-binding parameters from genetic algorithm fitting

Silicon at the fundamental scaling limit-atomic-scale donor-based quantum electronics

Silicon quantum electronics

scholarly article by Floris A. Zwanenburg et al published 10 July 2013 in Reviews of Modern Physics

Silicon quantum processor with robust long-distance qubit couplings.

artículo científico publicado en 2017

Simulation Study of Thin-Body Ballistic n-MOSFETs Involving Transport in Mixed $\Gamma$-L Valleys

Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling

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Simulations of nanowire transistors: atomistic vs. effective mass models

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Single and multiband modeling of quantum electron transport through layered semiconductor devices

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Single layer MoS 2 band structure and transport

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Smooth Quantum Hydrodynamic Model vs. NEMO Simulation of Resonant Tunneling Diodes

Social Networks of Researchers and Educators on nanoHUB.org

Spatially resolving valley quantum interference of a donor in silicon ⬇️

artículo científico publicado en 2014

Spectroscopy of a deterministic single-donor device in silicon

Spin blockade and exchange in Coulomb-confined silicon double quantum dots

artículo científico publicado en 2014

Spin-lattice relaxation times of single donors and donor clusters in silicon ⬇️

artículo científico publicado en 2014

Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting.

artículo científico publicado en 2013

Spin–orbit splittings in Si/SiGe quantum wells: from ideal Si membranes to realistic heterostructures

Stark tuning of the charge states of a two-donor molecule in silicon.

artículo científico publicado en 2011

Statistical modeling of ultra-scaled donor-based silicon phosphorus devices

Strain and electric field control of hyperfine interactions for donor spin qubits in silicon ⬇️

scholarly article in Physical Review B, vol. 91 no. 24, June 2015

Strain and electronic structure interactions in realistically-scaled quantum dot stacks

Strain effects in large-scale atomistic quantum dot simulations

Strain effects on the phonon thermal properties of ultra-scaled Si nanowires

Strain-engineered self-organized InAs∕GaAs quantum dots for long wavelength (1.3 μm–1.5 μm) optical applications

Strain-induced, off-diagonal, same-atom parameters in empirical tight-binding theory suitable for [110] uniaxial strain applied to a silicon parametrization

scholarly article in Physical Review B, vol. 81 no. 12, March 2010

Strong wavevector dependence of hole transport in heterostructures

Structures and energetics of silicon nanotubes from molecular dynamics and density functional theory

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Study of ultra-scaled SiGe/Si core/shell nanowire FETs for CMOS applications

Sub-threshold study of undoped trigate nFinFET

Subband engineering for p-type silicon ultra-thin layers for increased carrier velocities: An atomistic analysis

Surface Passivation in Empirical Tight Binding

Surface and Orientation Dependence on Performance of Trigated Silicon Nanowire pMOSFETs

Switching Mechanism and the Scalability of Vertical-TFETs

Symmetry Breaking and Fine Structure Splitting in Zincblende Quantum Dots: Atomistic Simulations of Long-Range Strain and Piezoelectric Field

TeraGrid Science Gateways and Their Impact on Science

The Electronic Structure and Transmission Characteristics of Disordered AlGaAs Nanowires

The NCN: Science, Simulation, and Cyber Services

The discretized Schrödinger equation and simple models for semiconductor quantum wells

article by Timothy Boykin et al published 5 May 2004 in European Journal of Physics

The discretized Schrödinger equation for the finite square well and its relationship to solid-state physics

article published in 2005

The evaluation of non-topological components in Berry phase and momentum relaxation time in a gapped 3D topological insulator ⬇️

artículo científico publicado en 2015

The impact of the nanoscale vision on the future of learning and teaching

The influence of proximity induced ferromagnetism, superconductivity and Fermi-velocity on evolution of Berry phase in Bi2Se3 topological insulator ⬇️

scholarly article by Parijat Sengupta & Gerhard Klimeck published 19 February 2015 in Semiconductor Science and Technology

The nanoelectronic modeling tool NEMO 5: Capabilities, validation, and application to Sb-heterostructures

The national center for the design of biomimetic nanoconductors

The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties

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Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot.

artículo científico publicado en 2018

Thermionic Emission as a Tool to Study Transport in Undoped nFinFETs

Thickness Engineered Tunnel Field-Effect Transistors Based on Phosphorene ⬇️

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Three-dimensional atomistic simulation of carbon nanotube FETs with realistic geometry

Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution ⬇️

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Tool-Based Curricula and Visual Learning

Transferable tight-binding model for strained group IV and III-V materials and heterostructures ⬇️

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Transistor roadmap projection using predictive full-band atomistic modeling

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Transistors for VLSI, for wireless: A view forwards through fog

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Transmission resonances and zeros in multiband models

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Transport calculationof Semiconductor Nanowires Coupled to Quantum Well Reservoirs

Transport in vertically stacked hetero-structures from 2D materials

Transport of spin qubits with donor chains under realistic experimental conditions ⬇️

scholarly article in Physical Review B, vol. 94 no. 4, July 2016

Transport spectroscopy of a single atom in a FinFET

Transport-based dopant metrology in advanced FinFETs

scholarly article published December 2008

Transverse momentum dependence of electron and hole tunneling in a full band tight-binding simulation [resonant tunnelling diodes]

Tuning lattice thermal conductance by porosity control in ultrascaled Si and Ge nanowires

Tuning lattice thermal conductance in ultra-scaled hollow SiNW: Role of porosity size, density and distribution

Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials ⬇️

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Tunnel transistors

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Tunneling and Short Channel Effects in Ultrascaled InGaAs Double Gate MOSFETs

Tunneling: The major issue in ultra-scaled MOSFETs

Two-electron states of a group-V donor in silicon from atomistic full configuration interactions

scholarly article in Physical Review B, vol. 97 no. 19, May 2018

Ultrafast characteristics of InGaP-InGaAlP laser amplifiers

Ultralow current density RTDs for tunneling-based SRAM

article

Unfolding and effective bandstructure calculations as discrete real- and reciprocal-space operations

Universal Behavior of Atomistic Strain in Self-Assembled Quantum Dots ⬇️

Utilizing the Unique Properties of Nanowire MOSFETs for RF Applications

Valence band effective-mass expressions in thesp3d5s*empirical tight-binding model applied to a Si and Ge parametrization

article

Valence-band warping in tight-binding models

scholarly article in Physical Review B, vol. 59 no. 11, March 1999

Valley degeneracies in (111) silicon quantum wells

Valley degeneracy in (110) Si quantum wells strain and misorientation effects

Valley splitting in Si quantum dots embedded in SiGe

Valley splitting in V-shaped quantum wells

article published in 2005

Valley splitting in finite barrier quantum wells

scholarly article in Physical Review B, vol. 77 no. 24, June 2008

Valley splitting in low-density quantum-confined heterostructures studied using tight-binding models

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Valley splitting in strained silicon quantum wells

Valley splitting in strained silicon quantum wells modeled with 2° miscuts, step disorder, and alloy disorder

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VolQD: Direct Volume Rendering of Multi-million Atom Quantum Dot Simulations

nanoHUB-U: A science gateway ventures into structured online education

nanoHUB.org - Online Simulation and More Materials for Semiconductors and Nanoelectronics in Education and Research

nanoHUB.org serving over 120,000 users worldwide: It's first cyber-environment assessment

nanoHUB.org: A Gateway to Undergraduate Simulation-Based Research in Materials Science and Related Fields

scholarly article by Tanya A. Faltens et al published 2015 in Materials Research Society symposia proceedings

nanoHUB.org: Advancing Education and Research in Nanotechnology

article published in 2008

nanoHUB.org: cloud-based services for nanoscale modeling, simulation, and education